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In this letter, we report the use of a novel cluster-carbon (C7 H7 +) implant and pulsed-excimer-laser-induced solid-phase-epitaxy technique to form embedded silicon-carbon (Si:C) source/drain (S/D) stressors. A substitutional carbon concentration Csub of ~ 1.1% was obtained in this letter. N-channel MOSFETs (n-FETs) integrated with embedded silicon-carbon (Si:C) S/D stressors formed using the novel cluster-carbon implant and pulsed-laser-anneal technique demonstrate improvement in current drive of 14% over control n-FETs formed with Si preamorphization implant. IOFFIDSAT comparison shows a 15% IDSAT enhancement for n-FETs with embedded Si:C S/D at an IOFF = 1 nA/mum despite a slightly higher series resistance.