Cart (Loading....) | Create Account
Close category search window
 

N-Channel MOSFETs With Embedded Silicon–Carbon Source/Drain Stressors Formed Using Cluster-Carbon Implant and Excimer-Laser-Induced Solid Phase Epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Shao-Ming Koh ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Sekar, K. ; Lee, D. ; Krull, W.
more authors

In this letter, we report the use of a novel cluster-carbon (C7 H7 +) implant and pulsed-excimer-laser-induced solid-phase-epitaxy technique to form embedded silicon-carbon (Si:C) source/drain (S/D) stressors. A substitutional carbon concentration Csub of ~ 1.1% was obtained in this letter. N-channel MOSFETs (n-FETs) integrated with embedded silicon-carbon (Si:C) S/D stressors formed using the novel cluster-carbon implant and pulsed-laser-anneal technique demonstrate improvement in current drive of 14% over control n-FETs formed with Si preamorphization implant. IOFFIDSAT comparison shows a 15% IDSAT enhancement for n-FETs with embedded Si:C S/D at an IOFF = 1 nA/mum despite a slightly higher series resistance.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 12 )

Date of Publication:

Dec. 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.