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A 2055-V (at 0.7 \hbox {mA/cm}^{2} ) 24-A (at 706 \hbox {W/cm}^{2} ) Normally On 4H-SiC JFET With 6.8- \hbox {mm}^{2} Active Area and Blocking-Voltage Capability Reaching the Material Limit

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7 Author(s)
Veliadis, V. ; Northrop Grumman Adv. Technol. Lab., Linthicum, MD ; Snook, M. ; McNutt, T. ; Hearne, H.
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A normally on 4H-SiC vertical-junction field-effect transistor (VJFET) of 6.8-mm2 active area was manufactured in seven photolithographic levels with no epitaxial regrowth and a single masked ion-implantation event. The VJFET exhibits low leakage currents with very sharp onsets of voltage breakdowns. At a forward gate bias of 2.5 V, the VJFET outputs 24 A (353 A/cm2) at a forward drain-voltage drop of 2 V (706 W/cm2), with a current gain of ID/IG = 21818, and a specific ON-state resistance of 5.7 mOmegaldrcm2. Self-aligned floating guard rings provide edge termination that blocks 2055 V at a gate bias of -37 V and a drain-current density of 0.7 mA/cm2. This blocking voltage corresponds to 94.4% of the VJFET's 11.7-mum/3.46 times 1015-cm3 SiC drift layer limit and is the highest reported blocking-voltage efficiency of any SiC power device under similar drain-current-density conditions.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 12 )

Date of Publication:

Dec. 2008

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