By Topic

Monolithically integrated photonic switching device using an MSM PD, MESFETs, and a VCSEL

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Matsuo, Shinji ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Nakahara, T. ; Kohama, Y. ; Ohiso, Y.
more authors

We have fabricated a photonic switching device that monolithically integrates a metal-semiconductor-metal photodetector, metal-semiconductor field-effect transistors, and a vertical-cavity surface-emitting laser. This device can perform both NOR- and OR-types of operation with thresholding input-output characteristics. The contrast ratio is more than 30 dB with optical gain. The device also shows a 3-dB bandwidth of 220 MHz and switching energy of 700 fJ at a 100-MHz frequency.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 10 )