By Topic

A cascadable InGaAsP-InP optoelectronic smart pixel with low switching energy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
K. Beyzavi ; Dept. of Electr. Eng., Princeton Univ., NJ, USA ; D. S. Kim ; C. P. Chao ; P. E. Burrows
more authors

We demonstrate for the first time a 1.3-μm wavelength optoelectronic InGaAsP-InP smart pixel switching circuit using monolithically integrated p-i-n photodiodes and heterojunction bipolar transistors, along with surface-mounted folded-cavity surface-emitting lasers. The circuit functions as a cascadable optical switch with an on/off ratio of 6, and a maximum optical input/output differential gain of 6. At a bit rate of 100 Mb/s, a record low switching energy of 30 fJ was observed while maintaining circuit gain and cascadability. This switching energy is the lowest reported to date for an optoelectronic smart pixel.

Published in:

IEEE Photonics Technology Letters  (Volume:7 ,  Issue: 10 )