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A cascadable InGaAsP-InP optoelectronic smart pixel with low switching energy

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5 Author(s)
Beyzavi, K. ; Dept. of Electr. Eng., Princeton Univ., NJ, USA ; Kim, D.S. ; Chao, C.P. ; Burrows, P.E.
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We demonstrate for the first time a 1.3-μm wavelength optoelectronic InGaAsP-InP smart pixel switching circuit using monolithically integrated p-i-n photodiodes and heterojunction bipolar transistors, along with surface-mounted folded-cavity surface-emitting lasers. The circuit functions as a cascadable optical switch with an on/off ratio of 6, and a maximum optical input/output differential gain of 6. At a bit rate of 100 Mb/s, a record low switching energy of 30 fJ was observed while maintaining circuit gain and cascadability. This switching energy is the lowest reported to date for an optoelectronic smart pixel.

Published in:

Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 10 )