By Topic

Electroabsorption in lattice-matched InGaAlAs-InAlAs quantum wells at 1.3 μm

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Cheng, A.-N. ; Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA ; Wieder, H.H. ; Chang, W.S.C.

Electroabsorption properties of (In/sub 0.53/Ga/sub 0.47/As)/sub 0.7/ (In/sub 0.52/Al/sub 0.48/As)/sub 0.3/-In/sub 0.52/Al/sub 0.48/As quantum wells were investigated experimentally and analytically in order to form a semi-empirical model for 1.3 μm optical modulator applications. The observed exciton energy shifts and changes in electron-hole wave function overlap integrals are in agreement with calculation for the quantum confined Stark effect. Empirically, we found that the room-temperature exciton absorption peak can be described by a Gaussian peak, and that the residual absorption should be characterized by an exponential tail. In order to provide realistic linewidth broadening parameters, empirical expressions are summarized here for this material.

Published in:

Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 10 )