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A 5-GHz-Band CMOS Receiver With Low LO Self-Mixing Front End

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7 Author(s)
Hsiao-Chin Chen ; Dept. of Electr. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei ; Tao Wang ; Hung-Wei Chiu ; Yu-Che Yang
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A 5.0-GHz-band monolithic direct-conversion receiver front end employing subharmonic mixers (SHMs) is demonstrated in 0.18-mum CMOS technology. Instead of using transistors as transconductors, the SHMs adopt on-chip 1:4 transformers to achieve voltage gain, and hence, excellent local-oscillator self-mixing suppression and good linearity can be obtained. Additionally, a CMOS-compatible postprocess is used to selectively remove the silicon substrate underneath the inductors and transformers of the receiver front end. While dissipating 43.9 mW from a 1.8-V supply, the micromachined receiver front end exhibits a voltage gain of 28.0 dB, a noise figure of 9.7 dB, a third-order input intercept point of -7.8 dBm at 5.0 GHz, and an input-referred dc offset of -118.0 dBm. The proposed receiver front end is further integrated with analog baseband circuits, a fractional-N frequency synthesizer, and a serial-to-parallel data converter to accomplish a multioperation-mode receiver.

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IEEE Transactions on Circuits and Systems I: Regular Papers  (Volume:56 ,  Issue: 4 )