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A 75-dB ,\cdot,\Omega 10-Gb/s Transimpedance Amplifier in 0.18- \mu m CMOS Technology

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2 Author(s)
Jun-De Jin ; Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu ; Hsu, S.S.H.

A six-stage transimpedance amplifier (TIA) was realized in a 0.18-mum complementary metal-oxide-semiconductor process. By adopting an effective gain-bandwidth product (GBW) enhancement technique, pi -type inductor peaking, the measured S 21, transimpedance gain, and bandwidth are 41 dB, 75 dBldrOmega, and 7.2 GHz, respectively, in the presence of an on-chip photodiode capacitance of 450 fF at the input. The 10-Gb/s TIA can operate under a maximum output swing of 800 mV pp and achieve a recorded GBW per DC power of 441.1 GHzldrOmega/mW.

Published in:

Photonics Technology Letters, IEEE  (Volume:20 ,  Issue: 24 )