By Topic

Ultraviolet Photodetector Based on Mg _{\rm x} Zn _{1 - {\rm x}} O Thin Films Deposited by Radio Frequency Magnetron Sputtering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Lee, Hsin-Ying ; Dept. of Electro-Opt. Eng., Nat. Cheng Kung Univ., Tainan ; Ming-Yi Wang ; Kuo-Jen Chang ; Wen-Jen Lin

The Mgx Zn1 - xO (0 les x les 0.36) films were deposited on an Al2O 3 substrate by radio frequency magnetron sputtering. The X-ray diffraction analysis showed the deposited MgZnO films have a single-phase hexagonal wurtzite structure. The optical bandgap of MgxZn1- xO films exhibited a linear increase from 3.25 to 4.04 eV with the Mg content x increasing from 0 to 0.36. Correspondingly, the cutoff wavelength of the resultant detectors varies from 380 to 310 nm, indicating that the detecting wavelengths of the MgxZn1 - xO metal-semiconductor-metal ultraviolet photodetectors (MSM-UPDs) can be controlled by simply adjusting the Mg contents in the film. The resultant MgZnO MSM-UPDs with various Mg contents exhibit promising performances. At a bias voltage of 20 V, the dark currents of all MSM-UPDs are smaller than 0.6 nA. The rejection ratio of the MSM-UPDs varies from 701 to 769, slightly dependent on the Mg contents.

Published in:

Photonics Technology Letters, IEEE  (Volume:20 ,  Issue: 24 )