By Topic

Design and Continuous-Wave Room-Temperature Performance of Ga(AlInAs)Sb DFB Lasers at 2.8 \mu m

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Hummer, M. ; Tech. Phys., Univ. Wurzburg, Wurzburg ; Rosner, K. ; Lehnhardt, T. ; Muller, M.
more authors

We have fabricated continuous-wave GaInAsSb-AlGaAsSb distributed-feedback (DFB) lasers in the 2.8- mum range, using a DFB concept requiring no subsequent overgrowth steps, by defining first-order Cr-Bragg gratings laterally to a ridge waveguide. We have simulated the confinement factor GammaCr of the optical mode and the Cr-grating for various ridge widths and investigated the effect on laser properties and single-mode yield in order to optimize DFB lasers in this wavelength region. In terms of low threshold current and high output power, we found an optimum ridge width around 7 mum. These lasers show the smallest average threshold current around 33 mA and a high average output power around 7 mW per facet.

Published in:

Photonics Technology Letters, IEEE  (Volume:21 ,  Issue: 1 )