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High-Performance (Al _{x} Ga _{1 - x} ) _{0.5} In _{0.5} P-Based Flip-Chip Light-Emitting Diode With a Geometric Sapphire Shaping Structure

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5 Author(s)
Yea-Chen Lee ; Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu ; Hao-Chung Kuo ; Chia-En Lee ; Tien-Chang Lu
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AlGaInP-based flip-chip light-emitting diodes (LEDs) with geometric sapphire shaping structures were fabricated by sapphire chemical etching and glue-bonded techniques. Furthermore, a nanoscale rough texture was applied on the epiwafer surface. This novel structure improved the output light power, wall-plug efficiency, and reliability. The output power of this structure was enhanced 31.2% under 350-mA current injection as compared with the conventional AlGaInP flip-chip LEDs.

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Photonics Technology Letters, IEEE  (Volume:20 ,  Issue: 23 )