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AlGaInP-based flip-chip light-emitting diodes (LEDs) with geometric sapphire shaping structures were fabricated by sapphire chemical etching and glue-bonded techniques. Furthermore, a nanoscale rough texture was applied on the epiwafer surface. This novel structure improved the output light power, wall-plug efficiency, and reliability. The output power of this structure was enhanced 31.2% under 350-mA current injection as compared with the conventional AlGaInP flip-chip LEDs.