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Enhanced Light Output Power of GaN-Based Vertical Light-Emitting Diodes by Using Highly Reflective ITO–Ag–Pt Reflectors

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7 Author(s)
Tak Jeong ; Korea Photonics Technol. Inst., Gwangju ; Kang Ho Kim ; Hyun Haeng Lee ; Seung Jae Lee
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Highly reflective and thermally stable indium-tin-oxide (ITO)-Ag-Pt p-type reflectors for use in high-performance GaN-based light-emitting diodes (LEDs) have been investigated. The specific contact resistance of the ITO-Ag-Pt contacts was found to be 7.2 ×10-5Omegamiddotcm2. The ITO-Ag-Pt contacts showed a higher reflectance after thermal annealing (82% at 460 nm), while the reflectance of the ITO-Ag contacts was reduced from 81% to 65%. In addition, surface agglomeration was drastically decreased, indicating that the Pt layer efficiently prevents the surface agglomeration of the Ag layer. The vertical LEDs (VLEDs) fabricated with the ITO-Ag-Pt contacts had a 17% higher output power (at 20 mA) than the VLEDs fabricated with the ITO-Ag contacts.

Published in:

Photonics Technology Letters, IEEE  (Volume:20 ,  Issue: 23 )

Date of Publication:

Dec.1, 2008

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