By Topic

A Hybrid Silicon–AlGaInAs Phase Modulator

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Hui-Wen Chen ; Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA ; Ying-hao Kuo ; Bowers, J.E.

We demonstrate a carrier depletion phase modulator based on the hybrid silicon evanescent platform. A low temperature and robust bonding process is employed to transfer III-V epitaxial layers to patterned silicon waveguides. An external electric field is applied across the doped multiple quantum wells so that carriers are depleted, resulting in an index change. The device has a voltage-length product, V pi L, of 4 V-mm at 1550 nm. An optical bandwidth of 100 nm with an extinction ratio over 10 dB is achieved. The device can handle optical power up to 28 mW.

Published in:

Photonics Technology Letters, IEEE  (Volume:20 ,  Issue: 23 )