Referenced Items are not available for this document.
During simulation of silicidation and oxidation, some layers are consumed (poly, silicon) and other layers grow (oxide, silicide). During these growth processes, grid must be added behind the advancing interface and removed in front of it. In a full integrated circuit process simulator, this has to be performed simultaneously with the transient solution of the diffusion equations for silicon dopants. This paper describes an approach of local adaption that leaves unchanged most of the grid. Robust algorithms are described for handling adaption in two-dimensional process simulation. Examples for etching, deposition, and oxidation are described
Published in:
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
(Volume:14
,
Issue:
10
)
Date of Publication: Oct 1995
- Page(s):
- 1223 - 1230
- ISSN :
- 0278-0070
- INSPEC Accession Number:
- 5075020
- Digital Object Identifier :
- 10.1109/43.466338
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Oct 1995
- Sponsored by :
- IEEE Council on Electronic Design Automation
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