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Silicon-Layer Guided-Mode Resonance Polarizer With 40-nm Bandwidth

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8 Author(s)
Lee, K.J. ; Dept. of Electr. & Comput. Eng., Univ. of Connecticut, Storrs, CT ; LaComb, R. ; Britton, B. ; Shokooh-Saremi, M.
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Fabrication and characterization of a guided-mode resonance-based polarizer is presented. This polarizer is made by electron-beam patterning a single layer of amorphous silicon on a glass substrate. The fabricated device has high and low transmittance for transverse-electric and transverse-magnetic polarizations, respectively, over a ~ 40-nm wavelength range for normally incident light. Its experimental extinction ratio is ~ 97:1 at a central wavelength of 1510 nm.

Published in:

Photonics Technology Letters, IEEE  (Volume:20 ,  Issue: 22 )

Date of Publication:

Nov.15, 2008

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