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Inverse Class-F AlGaN/GaN HEMT Microwave Amplifier Based on Lumped Element Circuit Synthesis Method

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3 Author(s)
Yasuyuki Abe ; Toyo Syst. Dev. Inc., Tokyo ; Ryo Ishikawa ; Kazuhiko Honjo

A lumped element design method considering more than third-order higher harmonic frequencies for a microwave AlGaN/GaN HEMT inverse class-F amplifier has been developed. The load circuit consists of a series reactance network having zero impedance at the odd order harmonic frequencies and poles at the even order higher harmonic frequencies as well as a shunt reactance network having zero impedance at the odd order harmonic frequencies. A fabricated AlGaN/GaN HEMT inverse class-F amplifier delivered a power-added efficiency of 76.3% and a drain efficiency of 78.3% at 879 MHz.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:56 ,  Issue: 12 )