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Low voltage, high efficiency GaAs Class E power amplifiers for wireless transmitters

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5 Author(s)
Sowlati, T. ; Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada ; André T.Salama, C. ; Sitch, J. ; Rabjohn, G.
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A Class E power amplifier for mobile communications is presented. The advantages of Class E over Class B, Class C, and Class F power amplifiers in a low voltage design are discussed. A fully integrated Class E power amplifier module operating at 835 MHz is designed, fabricated, and tested. The circuit is implemented in a self-aligned-gate, depletion mode 0.8-μm GaAs MESFET process. The amplifier delivers 24 dBm of power to the 50-Ω load with a power added efficiency greater than 50% at a supply voltage of 2.5 V. The power dissipated in the integrated matching networks is 1.5 times the power dissipated in the transistor

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Solid-State Circuits, IEEE Journal of  (Volume:30 ,  Issue: 10 )