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GaAs converter IC's for C-band DBS receivers

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7 Author(s)
Yoshida, S. ; Compound Semicond. Div., NEC Corp., Kawasaki, Japan ; Satoh, K. ; Miya, T. ; Umemoto, T.
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GaAs downconverter Monolithic Microwave Integrated Circuits (MMICs) for use in C-band direct broadcast satellite (DBS) receivers were developed. The IC consists of four (4) RF functional blocks and a dc bias block. The RF section includes a low noise amplifier, IF amplifier, mixer, and local oscillator. The dc section incorporates an internal dc bias generation circuit to compensate for device parameter fluctuations in wafer processing. The IC makes it easy to design a complete out-door converter unit with only the addition of two low noise FETs, a band pass filter, and an external dielectric resonator. This IC is realized on a small chip of only 1.1 mm×1.6 mm. The gate length of the FET is 0.5 μm. The active layers of the FETs and resistors are formed by an ion-implantation technique. This IC has a 3.0-dB noise figure and a 43-dB conversion gain at 80-mA total current consumption. To realize compact size and low cost, these ICs are offered in 12-pin QFP plastic packages

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Solid-State Circuits, IEEE Journal of  (Volume:30 ,  Issue: 10 )