Cart (Loading....) | Create Account
Close category search window

Dynamic Operational Stress Measurement of MEMS Using Time-Resolved Raman Spectroscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)

A dynamic-stress analysis method, based on time-resolved micro Raman spectroscopy, has been developed for reliability studies of microelectromechanical systems. This novel technique is illustrated by measuring temporally and spatially resolved stress maps of a piezoelectrically actuated silicon microcantilever when driven at its first- (6.094 kHz) and second-order (37.89 kHz) resonant frequencies. Stress amplitudes of up to 180 plusmn 10 MPa were measured at the maximum stress locations. The time-resolved Raman stress measurements are compared to the results of finite-element analysis and laser Doppler vibrometry.[2008-0003].

Published in:

Microelectromechanical Systems, Journal of  (Volume:17 ,  Issue: 6 )

Date of Publication:

Dec. 2008

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.