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Charge carrier transport in SiC Schottky interfaces: Shape factor approach

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4 Author(s)
Kurel, R. ; Tallinn Univ. of Technol., Tallinn ; Rang, T. ; Rang, G. ; Kasemaa, A.

Modelling of SiC based Schottky interfaces using shape factor (SF) is a novel approach for the SiC Schottky interfaces. The determining of the behaviour of the charge carrier transport under influence of the change of parameters like impurity concentration, barrier height and ambient temperature is discussed. Unified handling methodology has been demonstrated.

Published in:

Electronics Conference, 2008. BEC 2008. 11th International Biennial Baltic

Date of Conference:

6-8 Oct. 2008

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