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Dual material gate oxide stack symmetric double gate MOSFET: Improving short channel effects of nanoscale double gate MOSFET

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2 Author(s)
Razavi, P. ; Dept. of Electr. Eng., Semnan Univ., Semnan ; Orouji, A.A.

In this paper, short channel effects of the sub-100nm modified symmetric double-gate MOSFET that made of dual material gates and oxide stack with high-k material on top of a SiO2 layer examined and compared with conventional symmetric double-gate MOSFET using two-dimensional (2-D) simulation. This structure reduces short channel effects (SCEs) such as drain-induced barrier lowering (DIBL), hot electron effect and threshold voltage roll-off and has better current characteristics when compared to the conventional double-gate MOSFET.

Published in:
Electronics Conference, 2008. BEC 2008. 11th International Biennial Baltic

Date of Conference: 6-8 Oct. 2008

Page(s):
83 - 86
ISSN :
1736-3705
E-ISBN :
978-1-4244-2060-5
Print ISBN:
978-1-4244-2059-9
INSPEC Accession Number:
10322848
Conference Location :
Tallinn
Digital Object Identifier :
10.1109/BEC.2008.4657483
Product Type:
Conference Publications

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