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An Empirical Large-Signal Model for SiC MESFETs With Self-Heating Thermal Model

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2 Author(s)
Yuk, K.S. ; Dept. of Electr. & Comput. Eng., Univ. of California at Davis, Davis, CA ; Branner, G.R.

An empirical large-signal model for high-power microwave silicon-carbide MESFETs capable of predicting self-heating thermal behavior is presented. A generalized drain-current equation based on pulsed-gate IV characteristics measuring up to 2 A and 58 V is presented along with its dependence on temperature. A thermal subcircuit with a nonlinear thermal resistance characterized by a dc method is used to model the temperature behavior of the device. The effect of substrate trapping is modeled as a gate-source voltage correction. The complete drain-current model accurately predicts pulsed-gate and pulsed-gate-and-drain IV characteristics for various quiescent biases, as well as static IV characteristics. The complete large-signal model is shown to accurately predict S -parameters, large-signal output, and input reflected power across biases and frequencies, and third-order intermodulation products.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:56 ,  Issue: 11 )

Date of Publication:

Nov. 2008

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