Referenced Items are not available for this document.
Using a method of numerically controlled sacrificial oxidation, the dispersion of the thickness of the silicon layer of a 300 mm SOI wafer was successfully improved from PV: 2.4 nm to PV 0.9 nm.
Published in:
SOI Conference, 2008. SOI. IEEE International
Date of Conference: 6-9 Oct. 2008
- Page(s):
- 165 - 166
- ISSN :
- 1078-621X
- E-ISBN :
- 978-1-4244-1955-5
- Print ISBN:
- 978-1-4244-1954-8
- INSPEC Accession Number:
- 10322913
- Conference Location :
- New Paltz, NY
- Digital Object Identifier :
- 10.1109/SOI.2008.4656346
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