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Improvement of thickness uniformity of SOI by numerically controlled sacrificial oxidation using atmospheric-pressure plasma

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6 Author(s)
Sano, Y. ; Grad. Sch. of Eng., Osaka Univ., Suita ; Masuda, T. ; Kamisaka, S. ; Mimura, H.
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Using a method of numerically controlled sacrificial oxidation, the dispersion of the thickness of the silicon layer of a 300 mm SOI wafer was successfully improved from PV: 2.4 nm to PV 0.9 nm.

Published in:

SOI Conference, 2008. SOI. IEEE International

Date of Conference:

6-9 Oct. 2008