By Topic

PD-SOI MOSFET Body-to-Body leakage scaling trend and optimization

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
H. C. Lo ; R&D, Taiwan Semiconductor Manufacturing Company Ltd., No. 8, Li-Hsin Rd. 6, Hsinchu Science Park, Hsinchu City, Taiwan, R.O.C. ; W. C. Luo ; W. Y. Lu ; C. F. Cheng
more authors

Body-to-Body leakage (BBL) in stacked transistor configuration has been characterized by different back gate biases (Vbg), SOI thicknesses, and poly spacings. BBL increases significantly from 65 nm to 45 nm node mainly due to smaller poly spacing and shallower S/D junctions. By implant optimization and reduction of the SOI thickness, BBL can be reduced below reverse junction leakage level.

Published in:

SOI Conference, 2008. SOI. IEEE International

Date of Conference:

6-9 Oct. 2008