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Optimization of gate oxide quality in CMOS SOI process

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2 Author(s)
Nevin, W.A. ; X-Fab Semicond. Foundries AG, Erfurt ; Holke, A.

Several methods have been investigated for gettering impurities during CMOS processing, in order to achieve high-quality oxides on thick SOI. The use of buried implants, buried polysilicon, surface implants, and isolation trenches was found to significantly improve the oxide quality in each case.

Published in:

SOI Conference, 2008. SOI. IEEE International

Date of Conference:

6-9 Oct. 2008