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In this letter, plasma nitridation and oxidation on interpoly dielectric (IPD; SiO2-SiN-SiO2 ) for cell programming speed and reliabilities are investigated. Nitrided top oxide with N2 plasma shows excellent physical and electrical properties in terms of edge profile on IPD and fast programming voltage. However, plasma nitridation on a floating gate suffers from data retention problems that result from nitridelike residue along the word line. A method to densify and reoxidize bottom oxide with O2 plasma oxidation is proposed for leakage path inhibition and data retention improvement.