Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

Laser-formed metallic connections employing a lateral link structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Bernstein, J.B. ; Lincoln Lab., MIT, Lexington, MA, USA ; Colella, B.D.

Laser-programmed connections between metal lines on the same level of metallization have been developed as a means to achieve high density linking for customization in programmable gate arrays and for additive redundancy in restructurable integrated circuits. This work reports on the linking of aluminum based metal interconnect using a Q-switched diode pumped solid state laser where perfect yield was achieved. The links were formed by focusing the laser between two adjacent lines of metal, one of which was connected to a lower level of metal through a contact via. The resistance of the connections was approximately 3.0 Ω, including two vias and a connecting length of lower level metal

Published in:

Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on  (Volume:18 ,  Issue: 3 )