By Topic

Explicit approximations for the linewidth-enhancement factor in quantum-well lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
L. D. Westbrook ; British Telecom, Research Laboratories, Ipswich, UK ; M. J. Adams

Explicit formulas are presented for the linewidth enhancement factor in homogeneously broadened quantum-well lasers. Inspection of these formulas demonstrates clearly for the first time the dependence of the linewidth enhancement on well width, doping and photon energy. As a specific example, we calculate the linewidth enhancement factor for InGaAs/InP quantum wells. It is shown that the optimum strategy for minimal linewidth enhancement is to employ narrow wells, low injected carrier densities and photon energies much greater than the effective band-gap.

Published in:

IEE Proceedings J - Optoelectronics  (Volume:135 ,  Issue: 3 )