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Previous analyses of the gain and noise properties of superlattice avalanche photodiodes (APDs) are extended to allow for the production of up to two impact ionisations per initiating carrier per stage. The sensitivity of optical receivers employing these advance APD structures is determined, allowing for the influence both of residual hole ionisation and dark current. These devices are found to have higher gain and noise figures than their single ionisation electron counterparts. Receiver sensitivity studies are reported, which indicate that dark current and residual hole ionisation are of increased significance, but that provided these effects are small, improved performance is obtained.