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Browse Journals & Magazines > Optoelectronics, IEE Proceedi ...> Volume:135 Issue:1 Help

InGaAs pin photodiodes on recessed semi-insulating GaAs substrates

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4 Author(s)
Hodson, P.D. ; Plessey Research Caswell Limited, Allen Clark Research Centre, Towcester, UK ; Wallis, R.H. ; Davies, J.I. ; Shephard, H.E.

Low leakage current Ga1¿xInxAs pin photodiodes have been fabricated on GaAs substrates by incorporating an GaAs/Ga1¿xInxAs superlattice buffer to accommodate the lattice mismatch. Devices fabricated from Ga0.65In0.35As on n+ substrates exhibited leakage currents below 1 nA at ¿10 V, and external uncoated quantum efficiencies of ~47% at 1.15 ¿m. A growth and processing sequence for fabricating devices in recesses on semi-insulating GaAs substrates with a coplanar geometry, to allow subsequent GaAs circuit processing, has been identified, and shown not to introduce a significant leakage penalty.

Published in:
Optoelectronics, IEE Proceedings J  (Volume:135 ,  Issue: 1 )

Date of Publication: February 1988

Page(s):
2 - 4
ISSN :
0267-3932
Digital Object Identifier :
10.1049/ip-j:19880002
Product Type:
Journals & Magazines
Date of Current Version :
11 November 2008
Issue Date :
February 1988

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