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Three-dimensional quantum transport simulation of Si-nanowire transistors based on Wigner function model

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2 Author(s)
Yamada, Y. ; Dept. of Electr. & Electron. Eng., Kobe Univ., Kobe ; Tsuchiya, H.

We have developed a new self-consistent and three-dimensional quantum simulator for Si-nanowire transistors based on the Wigner function model, coupled with Schrodinger-Poisson algorithm. To achieve a sufficient accuracy for calculating subthreshold current, we introduced a third-order differencing scheme for discretizing the diffusion term in the Wigner transport equation. Then, by comparing with semiclassical Boltzmann and non-equilibrim Greenpsilas function approaches, the validity of the present simulator is discussed.

Published in:

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Date of Conference:

9-11 Sept. 2008

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