Cart (Loading....) | Create Account
Close category search window

Three-dimensional quantum transport simulation of Si-nanowire transistors based on Wigner function model

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Yamada, Y. ; Dept. of Electr. & Electron. Eng., Kobe Univ., Kobe ; Tsuchiya, H.

We have developed a new self-consistent and three-dimensional quantum simulator for Si-nanowire transistors based on the Wigner function model, coupled with Schrodinger-Poisson algorithm. To achieve a sufficient accuracy for calculating subthreshold current, we introduced a third-order differencing scheme for discretizing the diffusion term in the Wigner transport equation. Then, by comparing with semiclassical Boltzmann and non-equilibrim Greenpsilas function approaches, the validity of the present simulator is discussed.

Published in:

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Date of Conference:

9-11 Sept. 2008

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.