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A complete charge based compact model for silicon nanowire FETs including doping and advanced physical effects

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7 Author(s)
Feng Liu ; The Key Laboratory of Integrated Microsystems, Peking University Shenzhen Graduate School, China ; Jin He ; Lining Zhang ; Jian Zhang
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A charge-based silicon nanowire FET (SNWT) compact model has been developed. For the first time, inversion charge of SNWT with arbitrary doping concentration is described by an accurate equation including the effects of doping and volume inversion. Analytic drain current, transconductance, output conductance, terminal charges and capacitance are all physically derived and compared with numerical simulation. It shows that the core model is valid for all operation regions and a wide range of physical configuration including channel doping concentrations and geometrical dimensions. Moreover, advanced physical effects have been included in the model self-consistently.

Published in:

2008 International Conference on Simulation of Semiconductor Processes and Devices

Date of Conference:

9-11 Sept. 2008