Referenced Items are not available for this document.
A parallel 3D Monte Carlo (MC) simulator designed to work on unstructured tetrahedral elements has been developed for the simulations of nano-MOSFETs. The 3D MC code is tested by the simulating a 10 nm gate length double gate (DG) MOSFET with a body thickness of 6.1 nm. We investigate in this device architecture the magnitude of the self-force arising because of the use of tetrahedral elements for the device mesh. Finally, the quantum corrections using density gradient approach are described and applied to a simulation of a 40 nm gate length TriGate MOSFET with a HfO2 gate stack.
Published in:
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Date of Conference: 9-11 Sept. 2008
- Page(s):
- 153 - 156
- Print ISBN:
- 978-1-4244-1753-7
- INSPEC Accession Number:
- 10367509
- Conference Location :
- Hakone
- Digital Object Identifier :
- 10.1109/SISPAD.2008.4648260
- Product Type:
- Conference Publications
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