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3D Monte Carlo simulation of Tri-Gate MOSFETs using tetrahedral finite elements

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4 Author(s)
Manuel Aldegunde ; Dept. de Electrónica y Computación, Universidad de Santiago de Compostela, 15782, Spain ; Antonio J. Garcia-Loureiro ; Antonio Martinez ; Karol Kalna

A parallel 3D Monte Carlo (MC) simulator designed to work on unstructured tetrahedral elements has been developed for the simulations of nano-MOSFETs. The 3D MC code is tested by the simulating a 10 nm gate length double gate (DG) MOSFET with a body thickness of 6.1 nm. We investigate in this device architecture the magnitude of the self-force arising because of the use of tetrahedral elements for the device mesh. Finally, the quantum corrections using density gradient approach are described and applied to a simulation of a 40 nm gate length TriGate MOSFET with a HfO2 gate stack.

Published in:

2008 International Conference on Simulation of Semiconductor Processes and Devices

Date of Conference:

9-11 Sept. 2008