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An analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs

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5 Author(s)
Yu Ning Zhao ; Inst. of Microelectron., Peking Univ., Beijing ; Gang Du ; Jin Feng Kang ; Xiao Yan Liu
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In this paper, an analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs (DG SB MOSFETs) is developed, which takes the advantage of the 2D potential distribution. Simulation results have shown that current density undergo notable changes along the channel depth directions, indicating that Ids and Vth calculated by 2D current model achieve a better accuracy than Surf model.

Published in:

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Date of Conference:

9-11 Sept. 2008

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