Referenced Items are not available for this document.
Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, we review the basic concept on the choice of channel materials for high performance MOSFETs and address several important issues on carrier transport properties of mobility-enhanced CMOSFETs, including the effects of uniaxial strain on Si n-MOSFETs and the critical issues on Ge/III-V MOSFETs.
Published in:
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Date of Conference: 9-11 Sept. 2008
- Page(s):
- 9 - 12
- Print ISBN:
- 978-1-4244-1753-7
- INSPEC Accession Number:
- 10367473
- Conference Location :
- Hakone
- Digital Object Identifier :
- 10.1109/SISPAD.2008.4648224
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