By Topic

Comment on "Channel length dependence of random telegraph signal in sub-micron MOSFET's" [with reply]

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Jones, B.K. ; Sch. of Phys. & Chem., Lancaster Univ., UK ; Tsai, M.-H. ; Ma, T.P. ; Hook, T.B.

For original paper see M.-H. Tsai, T.P. Ma and T.B. Hook, ibid., vol.15. no.12, pp.504-6 (1994). It is not possible to determine whether the fluctuations in a resistance are caused by a number or a mobility fluctuation by simply varying the magnitude of a series resistance. This is the essential claim by the authors of the original paper. The series elements are MOS channels, but since the real charge density is assumed constant, it is not material that the gates of the series connected MOST are joined together. The authors of the original paper reply to these comments.<>

Published in:

Electron Device Letters, IEEE  (Volume:16 ,  Issue: 10 )