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Comment on "Channel length dependence of random telegraph signal in sub-micron MOSFET's" [with reply]

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4 Author(s)
B. K. Jones ; Sch. of Phys. & Chem., Lancaster Univ., UK ; M. -H. Tsai ; T. P. Ma ; T. B. Hook

For original paper see M.-H. Tsai, T.P. Ma and T.B. Hook, ibid., vol.15. no.12, pp.504-6 (1994). It is not possible to determine whether the fluctuations in a resistance are caused by a number or a mobility fluctuation by simply varying the magnitude of a series resistance. This is the essential claim by the authors of the original paper. The series elements are MOS channels, but since the real charge density is assumed constant, it is not material that the gates of the series connected MOST are joined together. The authors of the original paper reply to these comments.<>

Published in:

IEEE Electron Device Letters  (Volume:16 ,  Issue: 10 )