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Stress-voiding in tungsten-plug interconnect systems induced by high-temperature processing

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1 Author(s)
Walls, J.A. ; Digital Semiconductor, West Lothian, UK

We describe the sensitivity of sub-micron via integrity to high-temperature processing following via etch. It has been observed that thermal expansion of Al into the via hole, before tungsten deposition, may result in the fabrication of a deformed tungsten plug. Our results indicate that relaxation of the Al can give rise to stress-void formation under the tungsten plug. This may manifest itself either during electromigration stress or high-temperature storage. This mechanism represents a new reliability hazard for a tungsten-plug interconnect system.<>

Published in:

Electron Device Letters, IEEE  (Volume:16 ,  Issue: 10 )