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Investigation into the technique of active reactance compensation to improve the gain-bandwidth performance of microwave bipolar transistor amplifiers

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2 Author(s)
Madani, K. ; University of London, Chelsea College, Department of Electronics, London, UK ; Aithchison, C.S.

The technique of reactance compensation, known to be a successful circuit method of improving the bandwidth of single-port amplifiers, is investigated for two-port transistor amplifiers. A 3 GHz uncompenasted bipolar transistor amplifier of 800 MHz bandwidth and 6.5 dB gain, can be improved by about 70% in bandwidth under optimum conditions at the expense of about 1.3 dB reduction in the gain.

Published in:

Microwaves, Optics and Antennas, IEE Proceedings H  (Volume:127 ,  Issue: 5 )

Date of Publication:

October 1980

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