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Temperature dependence of the MOS mobility degradation

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2 Author(s)
Jones, B.K. ; University of Lancaster, Department of Physics, Lancaster, UK ; Russell, P.C.

The mobility of carriers in an MOS inversion layer appears to decrease as the degree of inversion increases. An investigation using Kelvin contact specimens has separated the extrinsic effect caused by the parasitic contact resistances to the channel and the intrinsic, surface scattering effect. The temperature dependence of the intrinsic effect is reported. The intrinsic effect appears to be process-dependent.

Published in:

Solid-State and Electron Devices, IEE Proceedings I  (Volume:135 ,  Issue: 4 )