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Influence of the preoxidation cleaning on the electrical properties of thin SIO2 layers

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4 Author(s)
J. L. Prom ; Centre National de la Recherche Scientifique, Laboratoire d'Automatique et d'Analyse des Systèmes, Toulouse, France ; J. Castagne ; G. Sarrabayrouse ; A. Munoz-Yague

The influence of a preoxidation cleaning procedure including an (HF + ethanol) step is investigated. It is shown that such a treatment gives a better thickness uniformity and improves the breakdown strength of silica layers.

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IEE Proceedings I - Solid-State and Electron Devices  (Volume:135 ,  Issue: 1 )