Skip to Main Content
Computer simulation under static conditions is performed to compare gain and saturation voltage with collector current for a power switching transistor for which process data had been measured. The transistor simulation is then carried out for a range of static solutions to generate look-up tables forming the circuit CAD model. A circuit analysis program is then used to examine the variation of current density with time within the transistor. Comparing instantaneous current density and collector-emitter voltage with a static solution of the ionisation integral under high current density conditions allows prediction of second breakdown under reverse base drive with inductive load. Computer results are compared with measured data.
Solid-State and Electron Devices, IEE Proceedings I (Volume:135 , Issue: 1 )
Date of Publication: February 1988