Close category search window
 

New dynamic semiconductor laser model based on the transmission-line modelling method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Lowery, A.J. ; University of Nottingham, Department of Electrical and Electronic Engineering, Nottingham, UK

A versatile semiconductor laser model has been developed by the addition of a frequency-dependent gain model to the transmission-line modelling (TLM) method. The model provides a sampled optical output waveform for a modulated laser, from which output spectra may be found. To minimise computing time, a technique of sampling below the optical frequency is introduced. The theoretical basis for this model is considered, and the results gained for a 300 ¿m cavity heterojunction laser are compared with those given by the solution of the rate equations.

Published in:
Optoelectronics, IEE Proceedings J  (Volume:134 ,  Issue: 5 )

Date of Publication: October 1987

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.