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Characteristics of the epitaxial semiconductor raman laser

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2 Author(s)
Suto, K. ; Research Institute of Electrical Communication, Tohoku University, Sendai, Japan ; Nishizawa, J.

An epitaxial semiconductor Raman laser with a directly reflection coated resonator structure instead of external mirrors is reported. Also, the modulation of a semiconductor Raman laser by carrier injection from the pn-junction formed on the active layer, and the amplifying experiment of the Raman laser are reported.

Published in:

Optoelectronics, IEE Proceedings J  (Volume:133 ,  Issue: 4 )