By Topic

Interfacial problems in preparing a-Si:H FETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
W. Z. Manookian ; Heriot-Watt University, Department of Physics, Currie, UK ; J. I. B. Wilson

We compare the performance of amorphous silicon/silicon nitride field-effect transistors having either nitride or silicon deposited first. In the case of silicon being the first layer, underlying source and drain contacts of aluminium or chromium were compared (as aluminium may react or diffuse more easily than chromium). The best devices required the nitride to be deposited first, following which it was essential to remove impurities such as ammonia from a single chamber system by dilution purging, before depositing silicon. Contributory influences on the poor characteristics of the alternative structure include the higher temperature necessary for nitride deposition, even when this overlies the silicon, and the bombardment of the silicon surface with energetic species from the nitride source gases.

Published in:

IEE Proceedings I - Solid-State and Electron Devices  (Volume:133 ,  Issue: 4 )