By Topic

A behavioral circuit simulation model for high-power GaAs Schottky diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
S. P. Pendharkar ; Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA ; C. R. Winterhalter ; K. Shenai

This paper proposes a physically based behavioral circuit simulation model for high-power GaAs Schottky diodes which is valid over all regions of operation. No conditional statements are needed to define the regions of operation. A new and more accurate method of obtaining depletion capacitance model parameters from the measured capacitance values is proposed. A simple current- and temperature-dependent resistance model is used to model the nonlinear diode resistance as well as contact and packaging resistances. The validity of the model is demonstrated under various DC and transient switching conditions. Simulation results are compared with the experimental data obtained from a 200 V GaAs Schottky diode. The diode model is tested at various temperatures in different test circuits and the simulation results are shown to be in excellent agreement with the measured data under static and dynamic switching conditions. The model can be easily implemented in other circuit simulators.

Published in:

IEEE Transactions on Electron Devices  (Volume:42 ,  Issue: 10 )