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First-order parameter extraction on enhancement silicon MOS transistors

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1 Author(s)
Hamer, M.F. ; British Telecom, Research Laboratories, Ipswich, UK

A novel transformation technique has been devised which enables the rapid evaluation of the key MOS transistor parameters, threshold voltage, gain and mobility degradation factor without recourse to the inaccurate compromise approaches previously used. In the paper, the previous methods are reviewed to highlight the errors which can occur, and then the new technique detailed. Extensions to the technique are discussed to enable three of the global parameters to be determined. Finally, a test block is described which is suitable for the parameter extraction routine developed.

Published in:

Solid-State and Electron Devices, IEE Proceedings I  (Volume:133 ,  Issue: 2 )

Date of Publication:

April 1986

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