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The performance of high-voltage field relieved Schottky barrier diodes

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4 Author(s)
Fisher, C.A. ; Philips, Research Laboratories, Redhill, UK ; Shannon, J.M. ; Paxman, D.H. ; Slatter, J.A.G.

A Schottky barrier diode with field relief p+-rings which modify the surface field in the device is described. The leakage reduction per unit area is a function of geometry and for the smallest ring spacing amounted to a factor of approximately 10. The data were fitted to a simple theory of the field reduction expected from the geometrical considerations. The limits of the technique are discussed.

Published in:

Solid-State and Electron Devices, IEE Proceedings I  (Volume:132 ,  Issue: 6 )