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GTO with monolithic antiparallel diode

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2 Author(s)
Huang, E. ; Mullard Ltd., Stockport, UK ; Barnes, J.P.

The integration of a monolithic antiparallel diode into the inactive cathode bond-pad area of a gate turnoff thyristor (GTO) has been investigated with computer modelling followed by experimental work, using as a vehicle the BTV60, a 120A GTO optimised for AC motor control. It is shown that this is feasible and is especially suitable for second generation GTO technology (fine interdigitation, unshort-circuited anode, lightly gold-killed), with the diode having the right characteristics in forward voltage drop and reverse recovery. The resulting devices performed well in tests and may lead to considerable simplification and cost reduction in motor control circuits.

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Solid-State and Electron Devices, IEE Proceedings I  (Volume:132 ,  Issue: 6 )