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LDMOS transistors with implanted and deposited surface layers

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2 Author(s)
K. Board ; University College of Swansea, Department of Electrical & Electronic Engineering, Swansea, UK ; M. Darwish

The effects of ion-implanted layers together with deposited surface films on resurfed LDMOS transistors is studied. The specific on-resistance of lateral DMOS transistors is calculated and compared for two types of device, the `resurfed¿ structure and a surface implanted SIPOS covered structure. Device parameters are first chosen so as to give 600 V breakdown for each type. It is shown that an LDMOS device with a surface implanted layer and SIPOS overlay gives superior performance with respect both to on resistance and insensitivity of the breakdown voltage to fluctuations in substrate doping density.

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IEE Proceedings I - Solid-State and Electron Devices  (Volume:132 ,  Issue: 4 )