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Photovoltaic effects of GaAs MESFET layers

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4 Author(s)
Papaioannou, G.J. ; University of Athens, Solid State Physics Section of the Physics Department, Athens, Greece ; Kaliakatsos, J.A. ; Euthymiou, P.C. ; Forrest, J.R.

The photovoltaic properties of GaAs MESFET layers are studied by varying illumination wavelength and temperature for two different electrode geometry devices. The active layer-substrate photoresponse is determined by the substrate deep traps. A significant contribution to the Dember effect is observed when the device electrode path is extended over the substrate. The photovoltage response to amplitude modulated illumination is limited by trapping effects within the substrate

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Solid-State and Electron Devices, IEE Proceedings I  (Volume:132 ,  Issue: 3 )